| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| VGS (th) (Max) @ Id: | 4V @ 90µA |
| Vgs (Max): | ±20V |
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | PG-TO252-3 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 50A, 10V |
| Verlustleistung (max): | 150W (Tc) |
| Verpackung: | Cut Tape (CT) |
| Verpackung / Gehäuse: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andere Namen: | IPD200N15N3 GCT IPD200N15N3 GCT-ND IPD200N15N3GBTMA1CT |
| Betriebstemperatur: | -55°C ~ 175°C (TJ) |
| Befestigungsart: | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
| Eingabekapazität (Ciss) (Max) @ Vds: | 1820pF @ 75V |
| Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Antriebsspannung (Max Rds On, Min Rds On): | 8V, 10V |
| Drain-Source-Spannung (Vdss): | 150V |
| detaillierte Beschreibung: | N-Channel 150V 50A (Tc) 150W (Tc) Surface Mount PG-TO252-3 |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 50A (Tc) |
| Email: | [email protected] |
