| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| VGS (th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±30V |
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | TO-220F-3 (Y-Forming) |
| Serie: | QFET® |
| Rds On (Max) @ Id, Vgs: | 170 mOhm @ 9.5A, 10V |
| Verlustleistung (max): | 43W (Tc) |
| Verpackung: | Tube |
| Verpackung / Gehäuse: | TO-220-3 Full Pack, Formed Leads |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Befestigungsart: | Through Hole |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
| Eingabekapazität (Ciss) (Max) @ Vds: | 1080pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Antriebsspannung (Max Rds On, Min Rds On): | 10V |
| Drain-Source-Spannung (Vdss): | 200V |
| detaillierte Beschreibung: | N-Channel 200V 19A (Tc) 43W (Tc) Through Hole TO-220F-3 (Y-Forming) |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 19A (Tc) |
| Email: | [email protected] |
