| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
| VCE Sättigung (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
| Transistor-Typ: | PNP - Pre-Biased |
| Supplier Device-Gehäuse: | TO-92-3 |
| Serie: | - |
| Widerstand - Emitterbasis (R2): | 47 kOhms |
| Widerstand - Basis (R1): | 22 kOhms |
| Leistung - max: | 300mW |
| Verpackung: | Bulk |
| Verpackung / Gehäuse: | TO-226-3, TO-92-3 (TO-226AA) |
| Befestigungsart: | Through Hole |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
| Frequenz - Übergang: | 200MHz |
| detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3 |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 68 @ 5mA, 5V |
| Strom - Collector Cutoff (Max): | 100nA (ICBO) |
| Strom - Kollektor (Ic) (max): | 100mA |
| Email: | [email protected] |
