| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| VGS (th) (Max) @ Id: | 5V @ 5mA |
| Supplier Device-Gehäuse: | SP6 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 12 mOhm @ 87.5A, 10V |
| Leistung - max: | 694W |
| Verpackung: | Bulk |
| Verpackung / Gehäuse: | SP6 |
| Betriebstemperatur: | -40°C ~ 150°C (TJ) |
| Befestigungsart: | Chassis Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Hersteller Standard Vorlaufzeit: | 32 Weeks |
| Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
| Eingabekapazität (Ciss) (Max) @ Vds: | 13700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 224nC @ 10V |
| Typ FET: | 4 N-Channel (H-Bridge) |
| FET-Merkmal: | Standard |
| Drain-Source-Spannung (Vdss): | 200V |
| detaillierte Beschreibung: | Mosfet Array 4 N-Channel (H-Bridge) 200V 175A 694W Chassis Mount SP6 |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 175A |
| Email: | [email protected] |
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
 |
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APTM20DUM08TG | Microsemi | MOSFET 2N-CH 200V 208A SP4 | Anfrage |
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APTM20HM08FG | Microsemi | MOSFET 4N-CH 200V 208A SP6 | Anfrage |
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APTM20DHM16TG | Microsemi | MOSFET 2N-CH 200V 104A SP4 | Anfrage |
|
APTM20SKM05G | Microsemi | MOSFET N-CH 200V 317A SP6 | Anfrage |
|
APTM20TAM16FPG | Microsemi | MOSFET 6N-CH 200V 104A SP6-P | Anfrage |
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APTM20DUM05TG | Microsemi | MOSFET 2N-CH 200V 333A SP8 | Anfrage |
|
APTM20DUM10TG | Microsemi | MOSFET 2N-CH 200V 175A SP4 | Anfrage |
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APTM20SKM10TG | Microsemi | MOSFET N-CH 200V 175A SP4 | Anfrage |
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APTM20SKM04G | Microsemi | MOSFET N-CH 200V 372A SP6 | Anfrage |
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APTM20SKM08TG | Microsemi | MOSFET N-CH 200V 208A SP4 | Anfrage |