| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| VGS (th) (Max) @ Id: | 5V @ 2.5mA |
| Vgs (Max): | ±30V |
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | SP1 |
| Serie: | POWER MOS 8™ |
| Rds On (Max) @ Id, Vgs: | 216 mOhm @ 33A, 10V |
| Verlustleistung (max): | 657W (Tc) |
| Verpackung: | Bulk |
| Verpackung / Gehäuse: | SP1 |
| Betriebstemperatur: | -40°C ~ 150°C (TJ) |
| Befestigungsart: | Chassis Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
| Eingabekapazität (Ciss) (Max) @ Vds: | 14800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 570nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Antriebsspannung (Max Rds On, Min Rds On): | 10V |
| Drain-Source-Spannung (Vdss): | 1000V |
| detaillierte Beschreibung: | N-Channel 1000V 40A (Tc) 657W (Tc) Chassis Mount SP1 |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 40A (Tc) |
| Email: | [email protected] |
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
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APTM100DA18T1G | Microsemi | MOSFET N-CH 1000V 40A SP1 | Anfrage |
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APTM100DUM90G | Microsemi | MOSFET 2N-CH 1000V 78A SP6 | Anfrage |
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APTM100A23STG | Microsemi | MOSFET 2N-CH 1000V 36A SP4 | Anfrage |
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APTM100A13SCG | Microsemi | MOSFET 2N-CH 1000V 65A SP6 | Anfrage |
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APTM100A13DG | Microsemi | MOSFET 2N-CH 1000V 65A SP6 | Anfrage |
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