| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| VGS (th) (Max) @ Id: | 5V @ 1mA |
| Vgs (Max): | ±30V |
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | D3Pak |
| Serie: | POWER MOS 8™ |
| Rds On (Max) @ Id, Vgs: | 370 mOhm @ 9A, 10V |
| Verlustleistung (max): | 335W (Tc) |
| Verpackung: | Tube |
| Verpackung / Gehäuse: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Befestigungsart: | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
| Eingabekapazität (Ciss) (Max) @ Vds: | 3550pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Antriebsspannung (Max Rds On, Min Rds On): | 10V |
| Drain-Source-Spannung (Vdss): | 600V |
| detaillierte Beschreibung: | N-Channel 600V 19A (Tc) 335W (Tc) Surface Mount D3Pak |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 19A (Tc) |
| Email: | [email protected] |
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
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APT17F100B | Microsemi | MOSFET N-CH 1000V 17A TO-247 | Anfrage |
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APT17F100S | Microsemi | MOSFET N-CH 1000V 17A D3PAK | Anfrage |
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APT18F60B | Microsemi | MOSFET N-CH 600V 18A TO-247 | Anfrage |
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APT18M80B | Microsemi | MOSFET N-CH 800V 19A TO-247 | Anfrage |
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