| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| VGS (th) (Max) @ Id: | - |
| Vgs (Max): | - |
| Technologie: | SiC (Silicon Carbide Junction Transistor) |
| Supplier Device-Gehäuse: | TO-257 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 415 mOhm @ 4A |
| Verlustleistung (max): | 47W (Tc) |
| Verpackung: | Bulk |
| Verpackung / Gehäuse: | TO-257-3 |
| Andere Namen: | 1242-1146 |
| Betriebstemperatur: | -55°C ~ 225°C (TJ) |
| Befestigungsart: | Through Hole |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status: | Contains lead / RoHS non-compliant |
| Eingabekapazität (Ciss) (Max) @ Vds: | 324pF @ 35V |
| Typ FET: | - |
| FET-Merkmal: | - |
| Antriebsspannung (Max Rds On, Min Rds On): | - |
| Drain-Source-Spannung (Vdss): | 650V |
| detaillierte Beschreibung: | 650V 4A (Tc) (165°C) 47W (Tc) Through Hole TO-257 |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 4A (Tc) (165°C) |
| Email: | [email protected] |
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|---|---|---|---|---|
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