| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| Spannung - Forward (Vf) (Max) @ If: | 1.74V @ 750mA |
| Spannung - Sperr (Vr) (max): | 1200V |
| Supplier Device-Gehäuse: | TO-257 |
| Geschwindigkeit: | No Recovery Time > 500mA (Io) |
| Serie: | - |
| Rückwärts-Erholzeit (Trr): | 0ns |
| Verpackung: | Tube |
| Verpackung / Gehäuse: | TO-257-3 |
| Andere Namen: | 1242-1111 1N8024GA |
| Betriebstemperatur - Anschluss: | -55°C ~ 250°C |
| Befestigungsart: | Through Hole |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Hersteller Standard Vorlaufzeit: | 18 Weeks |
| Bleifreier Status / RoHS-Status: | Contains lead / RoHS non-compliant |
| Diodentyp: | Silicon Carbide Schottky |
| detaillierte Beschreibung: | Diode Silicon Carbide Schottky 1200V 750mA Through Hole TO-257 |
| Strom - Sperrleckstrom @ Vr: | 10µA @ 1200V |
| Strom - Richt (Io): | 750mA |
| Kapazität @ Vr, F: | 66pF @ 1V, 1MHz |
| Basisteilenummer: | 1N8024 |
| Email: | [email protected] |
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
 |
1N823 | Microsemi | DIODE ZENER 6.2V 500MW DO35 | Anfrage |
|
1N822 | Microsemi | DIODE ZENER 6.2V 500MW DO35 | Anfrage |
|
1N821A, SEL. 1% VBR | Microsemi | DIODE ZENER 6.2V 500MW DO35 | Anfrage |
 |
1N8026-GA | GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | Anfrage |
 |
1N8035-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | Anfrage |
|
1N8032-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | Anfrage |
 |
1N821AUR | Microsemi | DIODE ZENER 6.2V 500MW DO213AA | Anfrage |
|
1N821UR-1 | Microsemi | DIODE ZENER 6.2V 500MW DO213AA | Anfrage |
|
1N821AUR-1 | Microsemi | DIODE ZENER 6.2V 500MW DO213AA | Anfrage |
|
1N821 | Microsemi | DIODE ZENER DO35 | Anfrage |
|
1N823A | Microsemi | DIODE ZENER 6.2V 500MW DO35 | Anfrage |
|
1N8031-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | Anfrage |
|
1N821-1 | Microsemi | DIODE ZENER 6.2V 500MW DO35 | Anfrage |
|
1N8033-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | Anfrage |
|
1N8028-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | Anfrage |
|
1N821A | Microsemi | DIODE ZENER 6.2V 500MW DO35 | Anfrage |
|
1N8030-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | Anfrage |
|
1N821A (DO35) | Microsemi | DIODE ZENER 6.2V 500MW DO35 | Anfrage |
|
1N823-1 | Microsemi | DIODE ZENER 6.2V 500MW DO35 | Anfrage |
|
1N8034-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | Anfrage |