| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Vgs (Max): | ±18V |
| Technology: | GaNFET (Gallium Nitride) |
| Supplier Device Package: | PQFN (8x8) |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 350 mOhm @ 5.5A, 8V |
| Power Dissipation (Max): | 65W (Tc) |
| Packaging: | Tube |
| Package / Case: | 4-PowerDFN |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 480V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.3nC @ 4.5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 8V |
| Drain to Source Voltage (Vdss): | 600V |
| Detailed Description: | N-Channel 600V 9A (Tc) 65W (Tc) Surface Mount PQFN (8x8) |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
| Email: | [email protected] |
