TK12Q60W,S1VQ
TK12Q60W,S1VQ
Part Number:
TK12Q60W,S1VQ
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N CH 600V 11.5A IPAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
57109 Pieces
Delivery Time:
1-2 days
Data sheet:
TK12Q60W,S1VQ.pdf

Introduction

TK12Q60W,S1VQ best price and fast delivery.
BOSER Technology is the distributor for TK12Q60W,S1VQ, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for TK12Q60W,S1VQ by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:3.7V @ 600µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-PAK
Series:DTMOSIV
Rds On (Max) @ Id, Vgs:340 mOhm @ 5.8A, 10V
Power Dissipation (Max):100W (Tc)
Packaging:Tube
Package / Case:TO-251-3 Stub Leads, IPak
Other Names:TK12Q60WS1VQ
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:890pF @ 300V
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
FET Type:N-Channel
FET Feature:Super Junction
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 11.5A (Ta) 100W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C:11.5A (Ta)
Email:[email protected]

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