SQS482ENW-T1_GE3
SQS482ENW-T1_GE3
Part Number:
SQS482ENW-T1_GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CHAN 30V POWERPAK 1212-
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
52609 Pieces
Delivery Time:
1-2 days
Data sheet:
SQS482ENW-T1_GE3.pdf

Introduction

SQS482ENW-T1_GE3 best price and fast delivery.
BOSER Technology is the distributor for SQS482ENW-T1_GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SQS482ENW-T1_GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8W
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:8.5 mOhm @ 16.4A, 10V
Power Dissipation (Max):62W (Tc)
Packaging:Cut Tape (CT)
Package / Case:PowerPAK® 1212-8W
Other Names:SQS482ENW-T1_GE3CT
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1865pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8W
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments