SQS481ENW-T1_GE3
SQS481ENW-T1_GE3
Part Number:
SQS481ENW-T1_GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET P-CH 150V 4.7A 1212-8
Quantity:
34741 Pieces
Delivery Time:
1-2 days
Data sheet:
SQS481ENW-T1_GE3.pdf

Introduction

SQS481ENW-T1_GE3 best price and fast delivery.
BOSER Technology is the distributor for SQS481ENW-T1_GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SQS481ENW-T1_GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:3.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:1.095 Ohm @ 5A, 10V
Power Dissipation (Max):62.5W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® 1212-8
Other Names:SQS481ENW-T1_GE3TR
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:385pF @ 75V
Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):150V
Detailed Description:P-Channel 150V 4.7A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C:4.7A (Tc)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments