SIR872DP-T1-GE3
SIR872DP-T1-GE3
Part Number:
SIR872DP-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 150V 53.7A PPAK SO-8
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
48763 Pieces
Delivery Time:
1-2 days
Data sheet:
SIR872DP-T1-GE3.pdf

Introduction

SIR872DP-T1-GE3 best price and fast delivery.
BOSER Technology is the distributor for SIR872DP-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SIR872DP-T1-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:3.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:18 mOhm @ 20A, 10V
Power Dissipation (Max):6.25W (Ta), 104W (Tc)
Packaging:Original-Reel®
Package / Case:PowerPAK® SO-8
Other Names:SIR872DP-T1-GE3DKR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2130pF @ 75V
Gate Charge (Qg) (Max) @ Vgs:64nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):150V
Detailed Description:N-Channel 150V 53.7A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount
Current - Continuous Drain (Id) @ 25°C:53.7A (Tc)
Email:[email protected]

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