SI2369DS-T1-GE3
Part Number:
SI2369DS-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET P-CH 30V 7.6A TO-236
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
29895 Pieces
Delivery Time:
1-2 days
Data sheet:
SI2369DS-T1-GE3.pdf

Introduction

SI2369DS-T1-GE3 best price and fast delivery.
BOSER Technology is the distributor for SI2369DS-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI2369DS-T1-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-236
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:29 mOhm @ 5.4A, 10V
Power Dissipation (Max):1.25W (Ta), 2.5W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:SI2369DS-T1-GE3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1295pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:P-Channel 30V 7.6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount TO-236
Current - Continuous Drain (Id) @ 25°C:7.6A (Tc)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments