NSS40302PDR2G
Part Number:
NSS40302PDR2G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
TRANS NPN/PNP 40V 3A 8SOIC
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
73805 Pieces
Delivery Time:
1-2 days
Data sheet:
NSS40302PDR2G.pdf

Introduction

NSS40302PDR2G best price and fast delivery.
BOSER Technology is the distributor for NSS40302PDR2G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for NSS40302PDR2G by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):40V
Vce Saturation (Max) @ Ib, Ic:115mV @ 200mA, 2A
Transistor Type:NPN, PNP
Supplier Device Package:8-SOIC
Series:-
Power - Max:653mW
Packaging:Tape & Reel (TR)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:NSS40302PDR2G-ND
NSS40302PDR2GOSTR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:2 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:100MHz
Detailed Description:Bipolar (BJT) Transistor Array NPN, PNP 40V 3A 100MHz 653mW Surface Mount 8-SOIC
DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 1A, 2V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):3A
Email:[email protected]

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