JAN1N5619US
Part Number:
JAN1N5619US
Manufacturer:
Microsemi
Description:
DIODE GEN PURP 600V 1A D5A
[LeadFreeStatus]未找到翻译
Contains lead / RoHS non-compliant
Quantity:
73107 Pieces
Delivery Time:
1-2 days
Data sheet:
JAN1N5619US.pdf

Introduction

JAN1N5619US best price and fast delivery.
BOSER Technology is the distributor for JAN1N5619US, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for JAN1N5619US by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Forward (Vf) (Max) @ If:1.6V @ 3A
Voltage - DC Reverse (Vr) (Max):600V
Supplier Device Package:D-5A
Speed:Fast Recovery = 200mA (Io)
Series:Military, MIL-PRF-19500/429
Reverse Recovery Time (trr):250ns
Packaging:Bulk
Package / Case:SQ-MELF, A
Other Names:1086-19421
1086-19421-MIL
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:8 Weeks
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Diode Type:Standard
Detailed Description:Diode Standard 600V 1A Surface Mount D-5A
Current - Reverse Leakage @ Vr:500nA @ 600V
Current - Average Rectified (Io):1A
Capacitance @ Vr, F:25pF @ 12V, 1MHz
Email:[email protected]

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