HN3C51F-GR(TE85L,F
HN3C51F-GR(TE85L,F
Part Number:
HN3C51F-GR(TE85L,F
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS 2NPN 120V 0.1A SM6
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
82020 Pieces
Delivery Time:
1-2 days
Data sheet:
HN3C51F-GR(TE85L,F.pdf

Introduction

HN3C51F-GR(TE85L,F best price and fast delivery.
BOSER Technology is the distributor for HN3C51F-GR(TE85L,F, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for HN3C51F-GR(TE85L,F by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):120V
Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Transistor Type:2 NPN (Dual)
Supplier Device Package:SM6
Series:-
Power - Max:300mW
Packaging:Original-Reel®
Package / Case:SC-74, SOT-457
Other Names:HN3C51F-GR(TE85LF)DKR
HN3C51F-GR(TE85LF)DKR-ND
HN3C51F-GR(TE85LFDKR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:100MHz
Detailed Description:Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):100mA
Email:[email protected]

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