HN3C10FUTE85LF
HN3C10FUTE85LF
Part Number:
HN3C10FUTE85LF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANSISTOR NPN US6
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
47510 Pieces
Delivery Time:
1-2 days
Data sheet:
HN3C10FUTE85LF.pdf

Introduction

HN3C10FUTE85LF best price and fast delivery.
BOSER Technology is the distributor for HN3C10FUTE85LF, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for HN3C10FUTE85LF by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):12V
Transistor Type:2 NPN (Dual)
Supplier Device Package:US6
Series:-
Power - Max:200mW
Packaging:Cut Tape (CT)
Package / Case:6-TSSOP, SC-88, SOT-363
Other Names:HN3C10FUTE85LFCT
Operating Temperature:-
Noise Figure (dB Typ @ f):1.1dB @ 1GHz
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Gain:11.5dB
Frequency - Transition:7GHz
Detailed Description:RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 20mA, 10V
Current - Collector (Ic) (Max):80mA
Email:[email protected]

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