HN1B01FU-Y(L,F,T)
HN1B01FU-Y(L,F,T)
Part Number:
HN1B01FU-Y(L,F,T)
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS NPN/PNP 50V 0.15A US6
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
79800 Pieces
Delivery Time:
1-2 days
Data sheet:
HN1B01FU-Y(L,F,T).pdf

Introduction

HN1B01FU-Y(L,F,T) best price and fast delivery.
BOSER Technology is the distributor for HN1B01FU-Y(L,F,T), we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for HN1B01FU-Y(L,F,T) by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
Transistor Type:NPN, PNP
Supplier Device Package:US6
Series:-
Power - Max:200mW
Packaging:Cut Tape (CT)
Package / Case:6-TSSOP, SC-88, SOT-363
Other Names:HN1B01FU-Y(LFT)CT
Operating Temperature:125°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:120MHz
Detailed Description:Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 120MHz 200mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 6V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):150mA
Email:[email protected]

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