HN1A01FE-GR,LF
HN1A01FE-GR,LF
Part Number:
HN1A01FE-GR,LF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS 2PNP 50V 0.15A ES6
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
84803 Pieces
Delivery Time:
1-2 days
Data sheet:
HN1A01FE-GR,LF.pdf

Introduction

HN1A01FE-GR,LF best price and fast delivery.
BOSER Technology is the distributor for HN1A01FE-GR,LF, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for HN1A01FE-GR,LF by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
Transistor Type:2 PNP (Dual)
Supplier Device Package:ES6
Series:-
Power - Max:100mW
Packaging:Tape & Reel (TR)
Package / Case:SOT-563, SOT-666
Other Names:HN1A01FE-GR(5L,F,T
HN1A01FE-GR(5LFTTR
HN1A01FE-GR(5LFTTR-ND
HN1A01FE-GR,LF(B
HN1A01FE-GR,LF(T
HN1A01FE-GRLF(BTR
HN1A01FE-GRLF(BTR-ND
HN1A01FE-GRLFTR
HN1A01FEGRLFTR
HN1A01FEGRLFTR-ND
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:16 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:80MHz
Detailed Description:Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):150mA
Email:[email protected]

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