| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
| Transistor Type: | PNP - Pre-Biased |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Series: | - |
| Resistor - Emitter Base (R2): | 10 kOhms |
| Resistor - Base (R1): | 10 kOhms |
| Power - Max: | 200mW |
| Packaging: | Cut Tape (CT) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Other Names: | FJV4102RMTFCT |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Frequency - Transition: | 200MHz |
| Detailed Description: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount SOT-23-3 (TO-236) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Current - Collector (Ic) (Max): | 100mA |
| Base Part Number: | FJV4102 |
| Email: | [email protected] |
