FJV3110RMTF
Part Number:
FJV3110RMTF
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
TRANS PREBIAS NPN 200MW SOT23-3
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
71754 Pieces
Delivery Time:
1-2 days
Data sheet:
1.FJV3110RMTF.pdf2.FJV3110RMTF.pdf

Introduction

FJV3110RMTF best price and fast delivery.
BOSER Technology is the distributor for FJV3110RMTF, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FJV3110RMTF by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):40V
Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Transistor Type:NPN - Pre-Biased
Supplier Device Package:SOT-23-3 (TO-236)
Series:-
Resistor - Base (R1):10 kOhms
Power - Max:200mW
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:FJV3110RMTF-ND
FJV3110RMTFTR
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:13 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:250MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 200mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):100mA
Base Part Number:FJV3110
Email:[email protected]

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