| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
| Transistor Type: | NPN - Pre-Biased |
| Supplier Device Package: | TO-92-3 |
| Series: | - |
| Resistor - Emitter Base (R2): | 47 kOhms |
| Resistor - Base (R1): | 4.7 kOhms |
| Power - Max: | 300mW |
| Packaging: | Tape & Box (TB) |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Other Names: | FJN3314RTA-ND FJN3314RTATB |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 6 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Frequency - Transition: | 250MHz |
| Detailed Description: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Current - Collector (Ic) (Max): | 100mA |
| Base Part Number: | FJN3314 |
| Email: | [email protected] |
