FJN3311RTA
Part Number:
FJN3311RTA
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
TRANS PREBIAS NPN 300MW TO92-3
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
45625 Pieces
Delivery Time:
1-2 days
Data sheet:
FJN3311RTA.pdf

Introduction

FJN3311RTA best price and fast delivery.
BOSER Technology is the distributor for FJN3311RTA, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FJN3311RTA by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):40V
Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Transistor Type:NPN - Pre-Biased
Supplier Device Package:TO-92-3
Series:-
Resistor - Base (R1):22 kOhms
Power - Max:300mW
Packaging:Tape & Box (TB)
Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:250MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 300mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):100mA
Email:[email protected]

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