| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Voltage - Test: | 29pF @ 32.5V |
| Voltage - Breakdown: | Die |
| Vgs(th) (Max) @ Id: | 275 mOhm @ 500mA, 5V |
| Technology: | GaNFET (Gallium Nitride) |
| Series: | eGaN® |
| RoHS Status: | Tray |
| Rds On (Max) @ Id, Vgs: | 2.9A (Ta) |
| Polarization: | Die |
| Other Names: | 917-EPC8005ENGR EPC8005ENGH |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | EPC8005ENGR |
| Input Capacitance (Ciss) (Max) @ Vds: | 0.22nC @ 5V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.5V @ 250µA |
| FET Feature: | N-Channel |
| Expanded Description: | N-Channel 65V 2.9A (Ta) Surface Mount Die |
| Drain to Source Voltage (Vdss): | - |
| Description: | TRANS GAN 65V 2.9A BUMPED DIE |
| Current - Continuous Drain (Id) @ 25°C: | 65V |
| Capacitance Ratio: | - |
| Email: | [email protected] |
