EPC2010C
EPC2010C
Part Number:
EPC2010C
Manufacturer:
EPC
Description:
TRANS GAN 200V 22A BUMPED DIE
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
95992 Pieces
Delivery Time:
1-2 days
Data sheet:
EPC2010C.pdf

Introduction

EPC2010C best price and fast delivery.
BOSER Technology is the distributor for EPC2010C, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for EPC2010C by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.5V @ 3mA
Vgs (Max):+6V, -4V
Technology:GaNFET (Gallium Nitride)
Supplier Device Package:Die Outline (7-Solder Bar)
Series:eGaN®
Rds On (Max) @ Id, Vgs:25 mOhm @ 12A, 5V
Power Dissipation (Max):-
Packaging:Tape & Reel (TR)
Package / Case:Die
Other Names:917-1085-2
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:12 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:540pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:5.3nC @ 5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V
Drain to Source Voltage (Vdss):200V
Detailed Description:N-Channel 200V 22A (Ta) Surface Mount Die Outline (7-Solder Bar)
Current - Continuous Drain (Id) @ 25°C:22A (Ta)
Email:[email protected]

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