DMNH10H028SPSQ-13
DMNH10H028SPSQ-13
Part Number:
DMNH10H028SPSQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 100V 40A POWERDI506
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
42428 Pieces
Delivery Time:
1-2 days
Data sheet:
DMNH10H028SPSQ-13.pdf

Introduction

DMNH10H028SPSQ-13 best price and fast delivery.
BOSER Technology is the distributor for DMNH10H028SPSQ-13, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for DMNH10H028SPSQ-13 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Test:2245pF @ 50V
Voltage - Breakdown:PowerDI5060-8
Vgs(th) (Max) @ Id:28 mOhm @ 20A, 10V
Vgs (Max):10V
Technology:MOSFET (Metal Oxide)
Series:-
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:40A (Tc)
Polarization:8-PowerTDFN
Other Names:DMNH10H028SPSQ-13DITR
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:16 Weeks
Manufacturer Part Number:DMNH10H028SPSQ-13
Input Capacitance (Ciss) (Max) @ Vds:36nC @ 10V
IGBT Type:±20V
Gate Charge (Qg) (Max) @ Vgs:4V @ 250µA
FET Feature:N-Channel
Expanded Description:N-Channel 100V 40A (Tc) 1.6W (Ta) Surface Mount PowerDI5060-8
Drain to Source Voltage (Vdss):-
Description:MOSFET N-CH 100V 40A POWERDI506
Current - Continuous Drain (Id) @ 25°C:100V
Capacitance Ratio:1.6W (Ta)
Email:[email protected]

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