| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 4V @ 18mA |
| Vgs (Max): | +25V, -10V |
| Technology: | SiCFET (Silicon Carbide) |
| Supplier Device Package: | TO-247-4L |
| Series: | C2M™ |
| Rds On (Max) @ Id, Vgs: | 59 mOhm @ 50A, 20V |
| Power Dissipation (Max): | 520W (Tc) |
| Package / Case: | TO-247-4 |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | Not Applicable |
| Input Capacitance (Ciss) (Max) @ Vds: | 3672pF @ 1000V |
| Gate Charge (Qg) (Max) @ Vgs: | 188nC @ 20V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 20V |
| Drain to Source Voltage (Vdss): | 1700V |
| Detailed Description: | N-Channel 1700V 72A (Tc) 520W (Tc) Through Hole TO-247-4L |
| Current - Continuous Drain (Id) @ 25°C: | 72A (Tc) |
| Email: | [email protected] |
