| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-247 [B] |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 390 mOhm @ 9A, 10V |
| Power Dissipation (Max): | 335W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-247-3 |
| Other Names: | APT18F60BMI APT18F60BMI-ND |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 11 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 3550pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 600V |
| Detailed Description: | N-Channel 600V 19A (Tc) 335W (Tc) Through Hole TO-247 [B] |
| Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
| Email: | [email protected] |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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APT200GN60JDQ4G | Microsemi | IGBT 600V 283A 682W SOT227 | Inquiry |
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APT17F80S | Microsemi | MOSFET N-CH 800V 18A D3PAK | Inquiry |
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APT17N80BC3G | Microsemi | MOSFET N-CH 800V 17A TO-247 | Inquiry |
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APT18M80B | Microsemi | MOSFET N-CH 800V 19A TO-247 | Inquiry |
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APT17F80B | Microsemi | MOSFET N-CH 800V 18A TO-247 | Inquiry |
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APT18M100B | Microsemi | MOSFET N-CH 1000V 18A TO-247 | Inquiry |
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APT17N80SC3G | Microsemi | MOSFET N-CH 800V 17A D3PAK | Inquiry |
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