| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Voltage - Test: | 1969pF @ 25V |
| Voltage - Breakdown: | TO-247 [B] |
| Vgs(th) (Max) @ Id: | 950 mOhm @ 6A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Series: | POWER MOS 7® |
| RoHS Status: | Tube |
| Rds On (Max) @ Id, Vgs: | 12A (Tc) |
| Polarization: | TO-247-3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | APT10090BFLLG |
| Input Capacitance (Ciss) (Max) @ Vds: | 71nC @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 5V @ 1mA |
| FET Feature: | N-Channel |
| Expanded Description: | N-Channel 1000V (1kV) 12A (Tc) 298W (Tc) Through Hole TO-247 [B] |
| Drain to Source Voltage (Vdss): | - |
| Description: | MOSFET N-CH 1000V 12A TO-247 |
| Current - Continuous Drain (Id) @ 25°C: | 1000V (1kV) |
| Capacitance Ratio: | 298W (Tc) |
| Email: | [email protected] |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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APT10090BLLG | Microsemi | MOSFET N-CH 1000V 12A TO-247 | Inquiry |
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APT100GN120JDQ4 | Microsemi | IGBT 1200V 153A 446W SOT227 | Inquiry |
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APT10035B2LLG | Microsemi | MOSFET N-CH 1000V 28A T-MAX | Inquiry |
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APT10045JLL | Microsemi | MOSFET N-CH 1000V 21A SOT-227 | Inquiry |
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APT10035B2FLLG | Microsemi Corporation | MOSFET N-CH 1000V 28A T-MAX | Inquiry |
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APT10035LLLG | Microsemi Corporation | MOSFET N-CH 1000V 28A TO-264 | Inquiry |
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APT100GN120J | Microsemi | IGBT 1200V 153A 446W SOT227 | Inquiry |
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APT10078BLLG | Microsemi | MOSFET N-CH 1000V 14A TO-247 | Inquiry |
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APT100DL60BG | Microsemi | DIODE GEN PURP 600V 100A TO247 | Inquiry |
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APT10045B2LLG | Microsemi | MOSFET N-CH 1000V 23A T-MAX | Inquiry |
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APT100GF60JU2 | Microsemi | IGBT 600V 120A 416W SOT227 | Inquiry |
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APT1003RBLLG | Microsemi | MOSFET N-CH 1000V 4A TO-247 | Inquiry |
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APT100DL60HJ | Microsemi | MOD DIODE 600V SOT-227 | Inquiry |
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APT10078SLLG | Microsemi | MOSFET N-CH 1000V 14A D3PAK | Inquiry |