| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-220AB |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 150 mOhm @ 11A, 10V |
| Power Dissipation (Max): | 150W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-220-3 |
| Other Names: | *IRF640N IRF640N IRF640N-ND SP001522470 |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1160pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 67nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 200V |
| Detailed Description: | N-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-220AB |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Email: | [email protected] |
