| Kondisyon | New and Original |
|---|---|
| Pinanggalingan | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 4.5V @ 200µA |
| Vgs (Max): | ±20V |
| teknolohiya: | MOSFET (Metal Oxide) |
| Supplier aparato Package: | PG-TO262-3 |
| serye: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 660 mOhm @ 2.1A, 10V |
| Power pagwawaldas (Max): | 62.5W (Tc) |
| packaging: | Tube |
| Package / Kaso: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Ibang pangalan: | IPI65R660CFD IPI65R660CFD-ND SP000861696 |
| operating Temperature: | -55°C ~ 150°C (TJ) |
| Salalayan Type: | Through Hole |
| Ang Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Libreng Status / Katayuan ng RoHS: | Lead free / RoHS Compliant |
| Input Kapasidad (Ciss) (Max) @ Vds: | 615pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| Type FET: | N-Channel |
| FET Tampok: | - |
| Drive Boltahe (Max Rds On, Min Rds On): | 10V |
| Alisan ng tubig sa Source Boltahe (Vdss): | 650V |
| Detalyadong Paglalarawan: | N-Channel 650V 6A (Tc) 62.5W (Tc) Through Hole PG-TO262-3 |
| Current - Ang patuloy Drain (Id) @ 25 ° C: | 6A (Tc) |
| Email: | [email protected] |
