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Hjem > Produkter > Diskrete halvlederprodukter > Transistorer - FET, MOSFET - Single > TK14C65W,S1Q
TK14C65W,S1Q
TK14C65W,S1Q
Delenummer:
TK14C65W,S1Q
Produsent:
Toshiba Semiconductor and Storage
Beskrivelse:
MOSFET N-CH 650V 13.7A I2PAK
[LeadFreeStatus]未找到翻译
Blyfri / RoHS-kompatibel
Mengde:
75373 Pieces
Leveringstid:
1-2 days
Dataark:
TK14C65W,S1Q.pdf
Forespørsel

Introduksjon

TK14C65W,S1Q best pris og rask levering.
BOSER Technology er distributør for TK14C65W,S1Q, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang tid levering. Vennligst send oss ​​kjøpsplanen din for TK14C65W,S1Q via e-post, vi vil gi deg en best pris i henhold til planen din.
Vår e-post: [email protected]

spesifikasjoner

Tilstand New and Original
Opprinnelse Contact us
distributør Boser Technology
Vgs (th) (Maks) @ Id:3.5V @ 690µA
Vgs (maks):±30V
Teknologi:MOSFET (Metal Oxide)
Leverandør Enhetspakke:I2PAK
Serie:DTMOSIV
Rds På (Maks) @ Id, Vgs:250 mOhm @ 6.9A, 10V
Strømdissipasjon (maks):130W (Tc)
emballasje:Tube
Pakke / tilfelle:TO-262-3 Long Leads, I²Pak, TO-262AA
Andre navn:TK14C65W,S1Q(S
TK14C65W,S1Q(S2
TK14C65W,S1Q-ND
TK14C65WS1Q
Driftstemperatur:150°C (TJ)
Monteringstype:Through Hole
Vannfølsomhetsnivå (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Inputkapasitans (Ciss) (Maks) @ Vds:1300pF @ 300V
Gateavgift (Qg) (Maks) @ Vgs:35nC @ 10V
FET Type:N-Channel
FET-funksjonen:-
Drivspenning (Maks. Rds På, Min Rds På):10V
Drain til Source Voltage (VDSS):650V
Detaljert beskrivelse:N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole I2PAK
Strøm - Kontinuerlig avløp (Id) @ 25 ° C:13.7A (Ta)
Email:[email protected]

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