| Tilstand | New and Original |
|---|---|
| Opprinnelse | Contact us |
| distributør | Boser Technology |
| Spenning - Samler Emitter Breakdown (Max): | 50V |
| Vce Metning (Maks) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
| Transistor Type: | NPN - Pre-Biased |
| Leverandør Enhetspakke: | TO-92-3 |
| Serie: | - |
| Motstand - Emitterbase (R2): | 1 kOhms |
| Motstand - Base (R1): | 1 kOhms |
| Strøm - Maks: | 500mW |
| emballasje: | Tape & Box (TB) |
| Pakke / tilfelle: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Andre navn: | 934059141126 PDTD113ES AMO PDTD113ES AMO-ND |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detaljert beskrivelse: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 50mA, 5V |
| Gjeldende - Samler Cutoff (Maks): | 500nA |
| Nåværende - Samler (Ic) (Maks): | 500mA |
| Basenummer: | PDTD113 |
| Email: | [email protected] |
