| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 900mV @ 250µA |
| Vgs (Max): | ±10V |
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | 4-WLCSP (1.6x1.6) |
| Seri: | TrenchFET® |
| Rds Pada (Max) @ Id, Vgs: | 23 mOhm @ 2A, 4.5V |
| Power Disipasi (Max): | 1.1W (Ta), 2.7W (Tc) |
| Pengemasan: | Tape & Reel (TR) |
| Paket / Case: | 4-UFBGA, WLCSP |
| Nama lain: | SI8425DB-T1-E1TR |
| Suhu Operasional: | -55°C ~ 150°C (TJ) |
| mount Jenis: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 2800pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| FET Jenis: | P-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 1.8V, 4.5V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 20V |
| Detil Deskripsi: | P-Channel 20V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6) |
| Current - Continuous Drain (Id) @ 25 ° C: | - |
| Email: | [email protected] |
