| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.35V @ 25µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | I-PAK |
| Seri: | HEXFET® |
| Rds Pada (Max) @ Id, Vgs: | 5.7 mOhm @ 25A, 10V |
| Power Disipasi (Max): | 63W (Tc) |
| Pengemasan: | Tube |
| Paket / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Nama lain: | SP001568656 |
| Suhu Operasional: | -55°C ~ 175°C (TJ) |
| mount Jenis: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 1470pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
| FET Jenis: | N-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 4.5V, 10V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 25V |
| Detil Deskripsi: | N-Channel 25V 81A (Tc) 63W (Tc) Through Hole I-PAK |
| Current - Continuous Drain (Id) @ 25 ° C: | 81A (Tc) |
| Email: | [email protected] |
