| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | IPAK (TO-251) |
| Seri: | HEXFET® |
| Rds Pada (Max) @ Id, Vgs: | 27 mOhm @ 26A, 10V |
| Power Disipasi (Max): | 107W (Tc) |
| Pengemasan: | Tube |
| Paket / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Nama lain: | *IRFU1205PBF SP001578428 |
| Suhu Operasional: | -55°C ~ 175°C (TJ) |
| mount Jenis: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 1300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
| FET Jenis: | N-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 55V |
| Detil Deskripsi: | N-Channel 55V 44A (Tc) 107W (Tc) Through Hole IPAK (TO-251) |
| Current - Continuous Drain (Id) @ 25 ° C: | 44A (Tc) |
| Email: | [email protected] |
