| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.5V @ 1mA |
| Vgs (Max): | +25V, -10V |
| Teknologi: | SiCFET (Silicon Carbide) |
| Paket Perangkat pemasok: | TO-247 [B] |
| Seri: | - |
| Rds Pada (Max) @ Id, Vgs: | 70 mOhm @ 32.5A, 20V |
| Power Disipasi (Max): | 300W (Tc) |
| Pengemasan: | Bulk |
| Paket / Case: | TO-247-3 |
| Suhu Operasional: | -55°C ~ 175°C (TJ) |
| mount Jenis: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 20V |
| FET Jenis: | N-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 20V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 700V |
| Detil Deskripsi: | N-Channel 700V 65A (Tc) 300W (Tc) Through Hole TO-247 [B] |
| Current - Continuous Drain (Id) @ 25 ° C: | 65A (Tc) |
| Email: | [email protected] |
