| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 4.8V @ 700µA |
| Vgs (Max): | ±20V |
| Teknologi: | GaNFET (Gallium Nitride) |
| Leverandør Device Package: | TO-247-3 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 22A, 10V |
| Power Dissipation (Max): | 119W (Tc) |
| Pakke / tilfælde: | TO-247-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 3 (168 Hours) |
| Fabrikantens standard ledetid: | 15 Weeks |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1000pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 650V |
| Detaljeret beskrivelse: | N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-247-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 34A (Tc) |
| Email: | [email protected] |
