| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 5V @ 100µA |
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | I2PAK |
| Serie: | MDmesh™ K5 |
| Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 3A, 10V |
| Power Dissipation (Max): | 110W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-262-3 Full Pack, I²Pak |
| Andre navne: | 497-17075 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 42 Weeks |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 900V |
| Detaljeret beskrivelse: | N-Channel 900V 6A (Tc) 110W (Tc) Through Hole I2PAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 6A (Tc) |
| Email: | [email protected] |
