| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.4V @ 250µA |
| Vgs (Max): | +20V, -16V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PowerPAK® SO-8 |
| Serie: | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs: | 1.1 mOhm @ 15A, 10V |
| Power Dissipation (Max): | 54.3W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | PowerPAK® SO-8 |
| Andre navne: | SIRC18DP-T1-GE3TR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 32 Weeks |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 5060pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 111nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | Schottky Diode (Body) |
| Drevspænding (Maks. RDS On, Min Rds On): | 4.5V, 10V |
| Afløb til Source Voltage (VDSS): | 30V |
| Detaljeret beskrivelse: | N-Channel 30V 60A (Tc) 54.3W (Tc) Surface Mount PowerPAK® SO-8 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 60A (Tc) |
| Email: | [email protected] |
