| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 1.3V @ 250µA |
| Vgs (Max): | ±12V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 4-Microfoot |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 135 mOhm @ 1A, 4.5V |
| Power Dissipation (Max): | 500mW (Ta) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 4-XFBGA, CSPBGA |
| Andre navne: | SI8821EDB-T2-E1TR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 46 Weeks |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 440pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 2.5V, 4.5V |
| Afløb til Source Voltage (VDSS): | 30V |
| Detaljeret beskrivelse: | P-Channel 30V 500mW (Ta) Surface Mount 4-Microfoot |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | - |
| Email: | [email protected] |
