| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 3V @ 250µA |
| Leverandør Device Package: | PowerPAK® SO-8 Dual |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 21 mOhm @ 9.7A, 10V |
| Strøm - Max: | 1.4W |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | PowerPAK® SO-8 Dual |
| Andre navne: | SI7960DP-T1-E3CT |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | - |
| Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
| FET Type: | 2 N-Channel (Dual) |
| FET-funktion: | Logic Level Gate |
| Afløb til Source Voltage (VDSS): | 60V |
| Detaljeret beskrivelse: | Mosfet Array 2 N-Channel (Dual) 60V 6.2A 1.4W Surface Mount PowerPAK® SO-8 Dual |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 6.2A |
| Basenummer: | SI7960 |
| Email: | [email protected] |
