| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 1V @ 800µA |
| Vgs (Max): | ±12V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PowerPAK® 1212-8 |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 48 mOhm @ 6.3A, 4.5V |
| Power Dissipation (Max): | 1.3W (Ta) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | PowerPAK® 1212-8 |
| Andre navne: | SI7703EDN-T1-E3TR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 49 Weeks |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 4.5V |
| FET Type: | P-Channel |
| FET-funktion: | Schottky Diode (Isolated) |
| Drevspænding (Maks. RDS On, Min Rds On): | 1.8V, 4.5V |
| Afløb til Source Voltage (VDSS): | 20V |
| Detaljeret beskrivelse: | P-Channel 20V 4.3A (Ta) 1.3W (Ta) Surface Mount PowerPAK® 1212-8 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 4.3A (Ta) |
| Email: | [email protected] |
