| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.2V @ 250µA |
| Vgs (Max): | ±16V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PowerPAK® 1212-8 |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 8.7 mOhm @ 17A, 10V |
| Power Dissipation (Max): | 3.8W (Ta), 52.1W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | PowerPAK® 1212-8 |
| Andre navne: | SI7613DN-T1-GE3TR SI7613DNT1GE3 |
| Driftstemperatur: | -50°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 32 Weeks |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2620pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 87nC @ 10V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 4.5V, 10V |
| Afløb til Source Voltage (VDSS): | 20V |
| Detaljeret beskrivelse: | P-Channel 20V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 35A (Tc) |
| Email: | [email protected] |
