| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 3.9V @ 100µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-263 (D²Pak) |
| Serie: | HEXFET®, StrongIRFET™ |
| Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 100A, 10V |
| Power Dissipation (Max): | 208W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andre navne: | SP001565244 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 4730pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 6V, 10V |
| Afløb til Source Voltage (VDSS): | 40V |
| Detaljeret beskrivelse: | N-Channel 40V 120A (Tc) 208W (Tc) Surface Mount TO-263 (D²Pak) |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 120A (Tc) |
| Email: | [email protected] |
