| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.4V @ 25µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 6-PQFN (2x2) |
| Serie: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 37 mOhm @ 7.8A, 10V |
| Power Dissipation (Max): | 2.1W (Ta) |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | 6-PowerVDFN |
| Andre navne: | IRFHS9301TR2PBFCT |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 580pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 4.5V, 10V |
| Afløb til Source Voltage (VDSS): | 30V |
| Detaljeret beskrivelse: | P-Channel 30V 6A (Ta), 13A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2) |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 6A (Ta), 13A (Tc) |
| Email: | [email protected] |
