| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 4V @ 100µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 8-PQFN (5x6) |
| Serie: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 13.5 mOhm @ 35A, 10V |
| Power Dissipation (Max): | 3.6W (Ta), 104W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 8-TQFN Exposed Pad |
| Andre navne: | IRFH7110TRPBFTR SP001575620 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 3240pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 87nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 100V |
| Detaljeret beskrivelse: | N-Channel 100V 11A (Ta), 58A (Tc) 3.6W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6) |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 11A (Ta), 58A (Tc) |
| Email: | [email protected] |
