| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 5V @ 250µA |
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | DIRECTFET L8 |
| Serie: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 38 mOhm @ 21A, 10V |
| Power Dissipation (Max): | 4.3W (Ta), 125W (Tc) |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | DirectFET™ Isometric L8 |
| Andre navne: | IRF7799L2TRPBFCT |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 6714pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 165nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 250V |
| Detaljeret beskrivelse: | N-Channel 250V 375A (Tc) 4.3W (Ta), 125W (Tc) Surface Mount DIRECTFET L8 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 375A (Tc) |
| Email: | [email protected] |
