| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 1V @ 250µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | Micro8™ |
| Serie: | FETKY™ |
| Rds On (Max) @ Id, Vgs: | 200 mOhm @ 1.2A, 10V |
| Power Dissipation (Max): | 1.25W (Ta) |
| Emballage: | Tube |
| Pakke / tilfælde: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 180pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
| FET Type: | P-Channel |
| FET-funktion: | Schottky Diode (Isolated) |
| Drevspænding (Maks. RDS On, Min Rds On): | 4.5V, 10V |
| Afløb til Source Voltage (VDSS): | 30V |
| Detaljeret beskrivelse: | P-Channel 30V 2A (Ta) 1.25W (Ta) Surface Mount Micro8™ |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 2A (Ta) |
| Email: | [email protected] |
